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Materials characterisation: XRD, SEM and TEM

Metallurgical and Materials Engineering (B.E./B.Tech) · Materials · free study notes for exams, placements and interviews

In short

Materials characterisation is the set of experimental techniques used to find out what a material is made of, how its atoms are arranged, and what its internal structure looks like at scales from millimetres down to atomic spacing. X-ray diffraction (XRD) identifies crystalline phases and measures lattice parameters, residual stress, texture and crystallite size; the scanning electron microscope (SEM) images surfaces and fracture faces with composition by EDS and orientation by EBSD; the transmission electron microscope (TEM) resolves dislocations, precipitates, interfaces and atomic planes in thin foils. Every metallurgy and materials syllabus (AICTE model curriculum, UGC CBCS) teaches these as a core laboratory and theory course, and GATE MT asks Bragg's law, indexing, structure factor, Scherrer broadening and electron–matter interaction almost every year. Indian employers — Tata Steel, JSW, SAIL R&D, BARC, DRDO (DMRL Hyderabad), ISRO/VSSC, HAL, GE, Hindalco, pharma and battery firms — run these instruments in quality control, failure investigation and R&D, and interviewers test them hard.

Explained

Origin of diffraction and Bragg's law

XRD: structure factor, indexing and extinction

What XRD measures in practice

SEM: electron–specimen interaction, signals and attachments

TEM: optics, imaging modes and diffraction

Choosing a technique, and the standards that govern the work

Key points

Formulas and examples

Bragg's law: nλ = 2d sinθ — λ = X-ray wavelength (nm or Å), d = interplanar spacing (nm), θ = Bragg angle (°), n = order (integer)
Cubic spacing: d_hkl = a / √(h² + k² + l²) — a = lattice parameter (nm); hence sin²θ = (λ²/4a²)(h²+k²+l²)
Tetragonal/hexagonal: 1/d² = (h²+k²)/a² + l²/c² (tetragonal); 1/d² = (4/3)(h²+hk+k²)/a² + l²/c² (hexagonal)
Structure factor: F_hkl = Σ_j f_j exp[2πi(h x_j + k y_j + l z_j)] — f_j = atomic scattering factor, (x,y,z) = fractional atomic coordinates; I ∝ |F_hkl|²
Scherrer equation: D = K λ / (β cosθ) — D = crystallite size (nm), K ≈ 0.9 (shape factor), β = FWHM in radians corrected for instrumental broadening, θ = Bragg angle
Williamson–Hall: β cosθ = Kλ/D + 4 ε sinθ — plot β cosθ vs sinθ: intercept gives size, slope 4ε gives microstrain ε
Density from XRD: ρ = n M / (N_A a³) — n = atoms per unit cell (2 BCC, 4 FCC), M = atomic mass (g/mol), N_A = 6.022×10²³ /mol, a in cm
Electron wavelength: λ = h/√(2 m₀ e V) (non-relativistic); relativistic λ = h / √[2 m₀ e V (1 + eV/2m₀c²)] — V = accelerating voltage (V)
Abbe resolution limit: d_min ≈ 0.61 λ / (n sinα) — explains why optical microscopy stops near 0.2 µm
TEM camera equation: R · d = λ · L — R = distance of diffraction spot from central spot (mm), L = camera length (mm), d = interplanar spacing (nm)
Retained austenite (direct comparison, two peaks): V_γ = (I_γ/R_γ) / (I_γ/R_γ + I_α/R_α) — I = integrated intensity, R = theoretical intensity factor for that reflection

Example 1 — Indexing a cubic pattern and finding the lattice parameter. A powder pattern taken with Cu Kα (λ = 0.1542 nm) shows first peaks at 2θ = 44.0°, 64.2° and 81.4°.

Example 2 — Crystallite size by the Scherrer equation. A nano-TiO₂ powder gives a peak at 2θ = 25.3° with measured FWHM 0.52° and instrumental broadening 0.10° (Cu Kα, K = 0.9).

Example 3 — Retained austenite in a carburised gear by direct comparison. Integrated intensities: austenite (220)_γ = 180 counts·° with R_γ = 20.1; ferrite/martensite (211)_α = 1,050 counts·° with R_α = 52.5 (R values from standard tables for Cr Kα).

Example 4 — TEM electron wavelength and resolution argument. For a 200 kV TEM:

Example 5 — Reading a selected-area diffraction pattern. A SAD pattern of an aluminium alloy foil (200 kV, λ = 0.00251 nm, camera length L = 800 mm) has its nearest spot at R = 10.3 mm.

FeatureXRDSEMTEM
ProbeX-rays (λ ≈ 0.15 nm)Electrons, 1–30 kVElectrons, 100–300 kV
InformationCrystal structure, phases, stress, textureSurface topography, morphology, composition (EDS), orientation (EBSD)Defects, nanoprecipitates, interfaces, lattice, local structure
ResolutionNo imaging; d to ~0.0001 nm precision1–10 nm0.1–0.3 nm
Sampled volumemm² area, µm–mm depthµm³ interaction volumenm³ in a thin foil
SpecimenPowder or flat polished solidAny solid, conductive or coatedFoil < 100 nm, 3 mm disc
Destructive?Essentially non-destructiveSemi (sectioning, coating)Yes
Typical Indian cost₹30–80 lakh (benchtop less)₹60 lakh–₹3 crore (FEG)₹8–30 crore+
Signal in SEMEnergyEscape depthContrast given
Secondary electrons< 50 eV~5–10 nmTopography, best resolution
Backscattered electronsNear beam energy~0.1–1 µmAtomic number, crystal orientation
Characteristic X-rayskeV~0.5–5 µmElemental composition
Auger electrons50 eV–2 keV~1–3 nmSurface chemistry (dedicated AES)

Where it is used

Interview questions

Common mistakes

Related topics

Crystallography and crystal structures · Phase diagrams and phase transformations · Non-destructive testing · Nanomaterials · Mechanical behaviour and fracture · Heat treatment of steels

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